Navitas Semiconductor, a pioneer in gallium nitride (GaN) and silicon carbide (SiC) technologies, has revealed that its advanced GaNSense™ power integrated circuits (ICs) will drive GreatWall Power。
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Geneva-based STMicroelectronics (ST) and China’s Innoscience Technology have entered into a collaborative agreement to advance gallium nitride (GaN) power semiconductor technology.
STM32F103C8T6 DataSheet
STMicroelectronics (ST) and Innoscience have announced a groundbreaking collaboration in gallium nitride (GaN) power products, combining their technological and manufacturing strengths to drive innovation and accelerate market adoption of GaN solutions.
STMicroelectronics STM32U3 Ultra-Low-Power Arm Cortex-M33 32-Bit
Samsung CEO Lee Jae-yong visits China